Introduction This report focuses on DC to AC power inverters, which aim to efficiently transform a DC power source to a high voltage AC source, similar to power that would be. HIGH AND LOW SIDE DRIVER Product Summary VOFFSET (IR2110) 500V max. (IR2113) 600V max. IO+/- 2A / 2A VOUT 10 - 20V ton/off (typ.) 120 & 94 ns Delay Matching (IR2110) 10 ns max. (IR2113) 20ns max. Www.irf.com 1 Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced.
- Fundamentals of MOSFET and IGBT Gate Driver Circuits Figure 2. Power MOSFET Models Figure 2c is the switching model of the MOSFET. The most important parasitic components that influences switching performance are shown in this model. Their respective roles are discussed in Section 2.3, which is dedicated to the switching procedure of the device.
- To turn the MOSFET on fully would require at least approximately 308V with respect to ground if the drive circuit is ground referenced. The IR2110 circuit uses VCC (not VDD), the bootstrap diode and the bootstrap capacitor to create the additional required voltage.
In the previous tutorial, it was discussed that for driving a MOSFET as high side switch, a gate driver circuit needs to be used. The IR2110 IC is one of the high speed and high voltage gate driver ICs for IGBT and power MOSFET. The IC is having independent low and high side output channel.
By using a single IC, a half bridge circuit can be operated in which one MOSFET is in high side configuration and another one is in the low side configuration. For driving the high side MOSFET, this IC uses a bootstrap circuit which otherwise could have to be designed externally. Before using this IC for driving the half or full bridge circuit, it is necessary to test the faultiness of the IC. A faulty IC can give unstable output and may blow up the MOSFET or other components in the circuit. In this tutorial, the method to test the IR2110 IC is discussed.
Components Required –
1. DC power supply of 5V and 12V.
![Ir2110 Mosfet Driver Circuit Diagram Ir2110 Mosfet Driver Circuit Diagram](https://www.researchgate.net/profile/Mukesh_Gautam5/publication/283282605/figure/download/fig5/AS:289408236044291@1446011708491/Typical-Connection-for-IR2110-MOSFET-Driver.png)
3. Microcontroller atmega328
Ir2110 Dead Time
The IR2110 IC comes in a 14-pin DIP package. It has the following pin configuration –
Fig. 1: List of Components required for IR2110 Gate Driver IC Tester
The IR-2110 has the following pin diagram –
![Diagram Diagram](/uploads/1/1/8/1/118137138/392950633.png)
Fig. 2: Pin Diagram of IR2110 IC
The IR2110 has the following internal circuitry –
Source: www.irf.com
In the internal circuit diagram of IR2110, the low side and high side blocks are separated with a dotted line for simplicity. The upper half circuit works for driving high side MOSFET and lower half is for driving the low side MOSFET.
As in accordance to the pin configuration of IR2110, the SD (shutdown) pin is used to shutdown the IC. This pin is active high, so for enabling the IC to work, this pin is connected to the ground. The VDD is the supply voltage for driving the internal circuitry of the IC and it should be in between 3V to 20 V (with reference to Vss) as per the datasheet. The VCC is directly connected to the drain of internal MOSFET of low side driver(as shown in internal circuit diagram of IR2110) and it can be in between 10V to 20V. For testing the IR 2110 IC, 5V is taken as VDD and 12V is taken as VCC. When the input at Lin or Hin pin is high then the IC gives High output at LO or HO pin corresponding to the input supply. When logic input at Lin and Hin are low then a low is obtained at LO and HO pin.
A square wave is applied at the Lin and Hin pin with the zero phase difference between them and the wave is generated using a microcontroller. For a good IC when Hin pin is high then it should give high at output otherwise low, same for Lin and LO.
For testing the IC, the 5V is taken as VDD and 12V is taken as VCC. The supply voltage for VDD and VCC can be drawn from a battery and then regulated to 5V and 12V level using 7805 and 7812 voltage regulator ICs. For voltage regulation, the anode of the battery should be connected to pin 1 of the voltage regulator ICs and pin 2 should be grounded. The respective voltage outputs then can be drawn from the pin 3 of the regulator ICs.
The square wave which has to be applied at the input of Lin and Hin pin is generated by a microcontroller. The controller works on TTL (transistor- transistor logic). So to avoid any synchronization error in between VDD and Hin/Lin input supply, 5V is taken as VDD. So, the VDD pin is connected to 5V while VCC and Vb pins are connected to 12V power source. The SD, Vss, COM and Vs pins are connected to the ground.
The square wave can be generated using any microcontroller board. In testing for this IC, the square wave has been generated using Arduino board. The Arduino is the most popular prototyping board and can be easily programmed to generate a perfect square wave. Since the square wave has to be applied at two pins of the IR2110, the Arduino is programmed to output square wave from two of its pins.
While assembling the circuit for testing the IR2110 IC, following precautions must be taken care of –
1. Never exceed the input voltage of VDD and VCC above their range as it may damage the IC. Check the input voltage limits from the datasheet of IR2110.
2. Always common the ground of 12V and 5V supply.
3. If TTL power source is used for Lin and Hin pin then VDD must be taken equal to 5V. This should be done to avoid any undermine state at the output.
4. Apply a clean DC to the IC to avoid any voltage spikes. For this, an electrolyte capacitor in parallel with ceramic capacitor for filtering the input power supply can be used.
5. Make proper connections as loose connections can result into abrupt wave at the output.
Fig. 4: Prototype of circuit for testing IR2110 MOSFET Gate Driver IC
How the circuit works –
From the internal circuit it can be seen that in high side and lows side, there are two MOSFETs at the end followed by a latch (on high side) and an AND gate (on low side).
Fig. 5: Internal Circuit Diagram of IR2110 Gate Driver IC
When the output from SR latch (on high side) is low then a bubble at output convert this to high and this makes the MOSFET Q1 ON and MOSFET Q2 OFF. This gives high output at HO pin. Whenever the SR latch gives low then it turns ON the MOSFET Q2 and turns OFF the MOSFET Q1 and a low is obtained at LO pin.
Similarly, on the low side when the output from AND gate is high then MOSFET Q3 is ON and MOSFET Q4 is OFF. So, high output is obtained at LO pin. In the case of low output from AND gate then LO pin gives low output.
The generated square wave from the controller should be applied at the Hin and Lin pins and at the output pins (LO and HO respectively) a square wave of same amplitude and frequency should be obtained. If the exact square wave is not obtained at the LO and HO pins or no square wave is output fromeither pin, then IR2110 in case is faulty. If the IC is heating too fast despite not exceeding input supply voltages beyond limit, then also the IC can be predicted to be faulty.
Testing the IR2110 IC –
After applying the square waves at Lin and Hin pins, the following voltage waveforms at the Lo and Ho pins were observed on a Cathode Ray Oscilloscope.
Fig. 6: Graph showing Output Waveform at Ho Pin
Fig. 7: Graph showing Output Waveform at Lo Pin
From the voltage waveforms observed on CRO, it can be seen that it has the same amplitude and frequency as of the input square wave. So, the IR2110 IC under test is working properly. It can now be used as a gate driver circuit for Half bridge or full H-bridge circuit without doubt.
In the next tutorial learn about improving the switching time of relays.
Project Video
IR2110 Introduction
In many applications MOSFETs configured as high-side switches and many times, it is configured as high-side and low-side switch. In such applications high-low side MOSFET drivers are used. IR2110 is the most popular high and low side driver IC. The IR2110 is a high voltage, high-speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high-frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
IR2110
Simple demonstration of connecting the IR2110 to a mosfet and control a 12V car light.
Catalog
IR2110 Pin Configuration and Functions
Pin Functions:
IR2110 Functional Block Diagram
IR2110 Parameters
Parameters | IR2110 |
---|---|
Channels | 2.0 |
Configuration | High-side and low-side |
Input Vcc min max | 10.0 V 20.0 V |
Isolation Type | Functional levelshift |
Output Current (Source) min | 2.5 A 2.0 A |
Output Current (Sink) min | 2.5 A 2.0 A |
Turn Off Propagation Delay max | 94.0 ns 125.0 ns |
Turn On Propagation Delay max | 120.0 ns 150.0 ns |
UVLO Input (On) | 8.5 V |
UVLO Input (Off) | 8.2 V |
UVLO Output (On) | 8.6 V |
UVLO Output (Off) | 8.2 V |
Voltage Class | 500.0 V |
IR2110 Features
- Floating channel designed for bootstrap operation
- Fully operational to +500 V
- Fully operational to +600 V version available (IR2113)
- dV/dt immune
- Gate drive supply range from 10 to 20 V
- Undervoltage lockout for both channels
- 3.3 V logic compatible
- Separate logic supply range from 3.3 V to 20 V
- Logic and power ground + /- 5 V offset
- CMOS Schmitt-triggered inputs with pull-down
- Cycle by cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
Ir2110 Mosfet Driver Circuit Diagram Tool
IR2110 Package Outline
- 14 Lead PDIP
- 16 Lead SOIC
How to Use IR2110
Application circuit for driving MOSFETs in both high and low side configurations using IR2110 is given below. The floating channel used to drive the N-channel power MOSFET or IGBT in the high side configuration that operates up to 500 volts. HO and LO are Low side gate drive output and High side gate driving output pins.
IR2110 Functional Equivalents
Mosfet Driver Circuit
IR2110 Applications
- DC motor driver
- AC Motor Speed control
- Half, full and three-phase bridge
- Pure sine wave inverter
- Soft starter for three-phase induction motor
IR2110 Popularity by Region
Component Datasheet
IR2110 Datasheet
Photo | Mfr. Part # | Company | Description | Package | Qty | Pricing (USD) | |||||||||||
IR2110STRPBF | Company:Infineon Technologies | Remark:IC GATE DRVR HALF-BRIDGE 16SOIC | Package:16-SOIC (0.295', 7.50mm Width) | DataSheet | In Stock:1000 Inquiry | Price:
| Inquiry |